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公开(公告)号:US20200066692A1
公开(公告)日:2020-02-27
申请号:US16344633
申请日:2016-12-14
申请人: INTEL IP CORPORATION
摘要: Package devices (systems and methods for their manufacture) may have an integrated circuit (IC) chip mounted on a top surface of a package substrate of and IC package, and embedded in a mold compound formed onto the top surface. They may also have conductive elements mounted on the top surface of the package substrate, embedded in the mold compound, horizontally disposed at a first vertical sidewall of the package device, and having vertical contact pads exposed at the first vertical sidewall. Conductor material traces of the IC package may electrically couple contacts of the chip to the conductive elements. Traces of the IC package may also electrically couple contacts of the chip to bottom surface contacts of the IC package. The vertical contact pads provide a shorter signal path to another device having vertically mounted surface contacts or opposing contact pads, thus improving signaling to the other device.
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公开(公告)号:US20190043800A1
公开(公告)日:2019-02-07
申请号:US16152221
申请日:2018-10-04
申请人: Intel IP Corporation
发明人: Klaus Jürgen REINGRUBER , Sven ALBERS , Christian Georg GEISSLER , Georg SEIDEMANN , Bernd WAIDHAS , Thomas WAGNER , Marc DITTES
IPC分类号: H01L23/528 , H05K1/11 , H01L23/00 , H01L23/498 , C25D5/10 , C25D7/12 , C25D5/02 , H01L23/522 , C25D5/48 , C25D5/54 , H05K1/02
摘要: Semiconductor packages having variable redistribution layer thicknesses are described. In an example, a semiconductor package includes a redistribution layer on a dielectric layer, and the redistribution layer includes first conductive traces having a first thickness and second conductive traces having a second thickness. The first thickness may be different than the second thickness, e.g., the first thickness may be less than the second thickness.
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公开(公告)号:US20200328182A1
公开(公告)日:2020-10-15
申请号:US16915282
申请日:2020-06-29
申请人: Intel IP Corporation
发明人: Bernd WAIDHAS , Georg SEIDEMANN , Andreas WOLTER , Thomas WAGNER , Stephan Stoeckl , Laurent MILLOU
IPC分类号: H01L25/065 , H01L23/538 , H01L23/498 , H01L23/00 , H01L21/56 , H01L25/00 , H01L21/683
摘要: An embedded-bridge substrate connector apparatus includes a patterned reference layer to which a first module and a subsequent module are aligned and the two modules are mated at the patterned reference layer. At least one module includes a silicon bridge connector that bridges to two devices, through the patterned reference layer, to the mated module.
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4.
公开(公告)号:US20190297758A1
公开(公告)日:2019-09-26
申请号:US15933402
申请日:2018-03-23
申请人: Intel IP Corporation
摘要: An electromagnetic shielding cap for shielding an electrical circuit on a circuit board includes a frame structure and a lid structure containing a passive electrical element structure. The lid structure is attached to the frame structure and further contains at least one contact interface for connecting the passive electrical element structure to an electrical circuit to be shielded by the electromagnetic shielding cap.
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公开(公告)号:US20200185490A1
公开(公告)日:2020-06-11
申请号:US16617548
申请日:2017-06-30
申请人: INTEL IP CORPORATION
摘要: The present disclosure is directed to systems and methods for fabricating a semiconductor inductor that includes a coil deposited on a stop layer that is deposited on a sacrificial substrate. The semiconductor inductor may be fabricated on a silicon wafer and singulated. The sacrificial substrate beneficially provides structural support for the singulated semiconductor inductor. The singulated semiconductor inductor advantageously requires minimal active die surface area. The removal of the sacrificial substrate after coupling to the active die beneficially reduces the overall thickness (or height) of the semiconductor package, providing a decided advantage in low profile, portable, electronic devices.
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公开(公告)号:US20190393191A1
公开(公告)日:2019-12-26
申请号:US16464213
申请日:2016-12-27
申请人: Intel IP Corporation
IPC分类号: H01L25/065 , H01L23/48 , H01L25/00 , H01L21/768
摘要: Embodiments may include an IC having an active substrate containing devices, and a bulk substrate, separated by an oxide layer or an etching stop layer. The IC may be partially thinned from a backside of the bulk substrate to create a cavity, while maintaining the dicing streets and/or the edges of the bulk substrate without being thinned. The cavity may be surrounded by a first edge and a second edge of the bulk substrate. An additional IC may be placed within the cavity of the bulk substrate to form a stacking IC with a reduced height. The ICs of the stacking IC may be electronically coupled using TSVs embedded within the active substrate of the ICs. Other embodiments may be described and/or claimed.
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7.
公开(公告)号:US20190214369A1
公开(公告)日:2019-07-11
申请号:US16325970
申请日:2016-09-28
申请人: Intel IP Corporation
IPC分类号: H01L25/065 , H01L23/498
CPC分类号: H01L25/0657 , H01L23/00 , H01L23/31 , H01L23/49816 , H01L24/16 , H01L24/24 , H01L24/48 , H01L24/73 , H01L29/0657 , H01L2224/05 , H01L2224/13025 , H01L2224/16227 , H01L2224/24051 , H01L2224/24147 , H01L2224/244 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48148 , H01L2224/48227 , H01L2224/73204 , H01L2224/73257 , H01L2224/73259 , H01L2224/73265 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06517 , H01L2225/06541 , H01L2225/06544 , H01L2225/06555 , H01L2924/10158 , H01L2924/15311 , H01L2224/81 , H01L2924/00
摘要: In accordance with disclosed embodiments, there are provided methods, systems, and apparatuses for implementing reduced height semiconductor packages for mobile electronics. For instance, there is disclosed in accordance with one embodiment a stacked die package having therein a bottom functional silicon die; a recess formed within the bottom functional silicon die by a thinning etch partially reducing a vertical height of the bottom functional silicon die at the recess; and a top component positioned at least partially within the recess formed within the bottom functional silicon die. Other related embodiments are disclosed.
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