PACKAGE DEVICES HAVING A BALL GRID ARRAY WITH SIDE WALL CONTACT PADS

    公开(公告)号:US20200066692A1

    公开(公告)日:2020-02-27

    申请号:US16344633

    申请日:2016-12-14

    摘要: Package devices (systems and methods for their manufacture) may have an integrated circuit (IC) chip mounted on a top surface of a package substrate of and IC package, and embedded in a mold compound formed onto the top surface. They may also have conductive elements mounted on the top surface of the package substrate, embedded in the mold compound, horizontally disposed at a first vertical sidewall of the package device, and having vertical contact pads exposed at the first vertical sidewall. Conductor material traces of the IC package may electrically couple contacts of the chip to the conductive elements. Traces of the IC package may also electrically couple contacts of the chip to bottom surface contacts of the IC package. The vertical contact pads provide a shorter signal path to another device having vertically mounted surface contacts or opposing contact pads, thus improving signaling to the other device.

    SEMICONDUCTOR INDUCTORS
    5.
    发明申请

    公开(公告)号:US20200185490A1

    公开(公告)日:2020-06-11

    申请号:US16617548

    申请日:2017-06-30

    摘要: The present disclosure is directed to systems and methods for fabricating a semiconductor inductor that includes a coil deposited on a stop layer that is deposited on a sacrificial substrate. The semiconductor inductor may be fabricated on a silicon wafer and singulated. The sacrificial substrate beneficially provides structural support for the singulated semiconductor inductor. The singulated semiconductor inductor advantageously requires minimal active die surface area. The removal of the sacrificial substrate after coupling to the active die beneficially reduces the overall thickness (or height) of the semiconductor package, providing a decided advantage in low profile, portable, electronic devices.

    PACKAGES OF STACKING INTEGRATED CIRCUITS
    6.
    发明申请

    公开(公告)号:US20190393191A1

    公开(公告)日:2019-12-26

    申请号:US16464213

    申请日:2016-12-27

    摘要: Embodiments may include an IC having an active substrate containing devices, and a bulk substrate, separated by an oxide layer or an etching stop layer. The IC may be partially thinned from a backside of the bulk substrate to create a cavity, while maintaining the dicing streets and/or the edges of the bulk substrate without being thinned. The cavity may be surrounded by a first edge and a second edge of the bulk substrate. An additional IC may be placed within the cavity of the bulk substrate to form a stacking IC with a reduced height. The ICs of the stacking IC may be electronically coupled using TSVs embedded within the active substrate of the ICs. Other embodiments may be described and/or claimed.