Invention Application
- Patent Title: SPIN CURRENT MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
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Application No.: US16055589Application Date: 2018-08-06
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Publication No.: US20190067563A1Publication Date: 2019-02-28
- Inventor: Eiji KOMURA , Yohei SHIOKAWA
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2017-159402 20170822; JP2018-119920 20180625
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/04 ; H01L43/06 ; G01R33/09

Abstract:
Provided is a spin current magnetoresistance effect element, including: a magnetoresistance effect element including a first ferromagnetic metal layer, a second ferromagnetic metal layer configured for magnetization direction to be changed, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and a spin-orbit torque wiring extending in a first direction which intersects a lamination direction of the magnetoresistance effect element and joined to the second ferromagnetic metal layer, wherein, a third end portion of the non-magnetic layer is located between a first end portion of the first ferromagnetic metal layer and a second end portion of the second ferromagnetic metal layer as viewed from the lamination direction on one of side surfaces of the magnetoresistance effect element.
Public/Granted literature
- US10374151B2 Spin current magnetoresistance effect element and magnetic memory Public/Granted day:2019-08-06
Information query
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