SPIN CURRENT MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

    公开(公告)号:US20190067563A1

    公开(公告)日:2019-02-28

    申请号:US16055589

    申请日:2018-08-06

    Abstract: Provided is a spin current magnetoresistance effect element, including: a magnetoresistance effect element including a first ferromagnetic metal layer, a second ferromagnetic metal layer configured for magnetization direction to be changed, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and a spin-orbit torque wiring extending in a first direction which intersects a lamination direction of the magnetoresistance effect element and joined to the second ferromagnetic metal layer, wherein, a third end portion of the non-magnetic layer is located between a first end portion of the first ferromagnetic metal layer and a second end portion of the second ferromagnetic metal layer as viewed from the lamination direction on one of side surfaces of the magnetoresistance effect element.

    RESISTIVE ELEMENT ARRAY CIRCUIT, RESISTIVE ELEMENT ARRAY CIRCUIT UNIT, AND INFRARED SENSOR

    公开(公告)号:US20200072664A1

    公开(公告)日:2020-03-05

    申请号:US16550371

    申请日:2019-08-26

    Abstract: A resistive element array circuit includes word lines, bit lines, resistive elements, a selector, a differential amplifier, and a ground terminal. The word lines are coupled to a power supply. The resistive elements are each disposed at an intersection of corresponding one of the word lines and corresponding one of the bit lines. The selector is configured to select one word line and one bit line. The differential amplifier includes a positive input terminal configured to be coupled to the selected one of the bit lines which is selected by the selector, a negative input terminal configured to be coupled to non-selected one of the bit lines which is not selected by the selector and to non-selected one of the word lines which is not selected by the selector, an output terminal being coupled to the negative input terminal. The ground terminal is coupled to the positive input terminal.

    THERMALLY ASSISTED RECORDING HEAD UTILIZING LASER LIGHT WITH LIMITED WAVELENGTH RANGE
    5.
    发明申请
    THERMALLY ASSISTED RECORDING HEAD UTILIZING LASER LIGHT WITH LIMITED WAVELENGTH RANGE 有权
    用有限波长范围的热辅助记录头使用激光

    公开(公告)号:US20140269233A1

    公开(公告)日:2014-09-18

    申请号:US13830910

    申请日:2013-03-14

    CPC classification number: G11B5/314 G11B5/6088 G11B2005/0021

    Abstract: A thermally assisted magnetic recording head includes core that propagates laser light as propagation light, a near-field light generator that faces a portion of the core and extends to an air bearing surface (ABS), the near-field light generator coupled to the propagation light propagating through the core so as to generate a surface plasmon, propagating the surface plasmon to an end part facing the ABS, and generating near-field light at the end part to irradiate the near-field light to a magnetic recording medium, a main magnetic pole layer provided in the vicinity of the near-field light generator where an end part is positioned on the ABS, a laser diode that generates laser light of wavelength 890 nm to 1,000 nm and enters the laser light into the core, and a photodiode provided on a silicon substrate measures an intensity of the laser light entering from the laser diode to the core.

    Abstract translation: 热辅助磁记录头包括将激光作为传播光传播的芯,近场光发生器,其面对芯的一部分并延伸到空气轴承表面(ABS),近场光发生器耦合到传播 光传播通过芯,以产生表面等离子体,将表面等离子体传播到面向ABS的端部,并在端部产生近场光,以将近场光照射到磁记录介质,主 设置在近场光发生器附近的磁极层,端部位于ABS上;激光二极管,其生成波长为890nm至1000nm的激光并将激光进入芯中;以及光电二极管 设置在硅衬底上测量从激光二极管进入芯的激光的强度。

    ELECTROMAGNETIC WAVE SENSOR
    6.
    发明申请

    公开(公告)号:US20220178758A1

    公开(公告)日:2022-06-09

    申请号:US17539976

    申请日:2021-12-01

    Abstract: An electromagnetic wave sensor includes a substrate having transmittance of electromagnetic waves having a specific wavelength, an insulator layer provided on one surface side of the substrate, a thermistor film disposed to have a space between the thermistor film and one surface of the substrate, and a wiring part provided inside or on a surface of the insulator layer and electrically connected to the thermistor film, wherein a transmittance of the electromagnetic waves at a portion facing the thermistor film is relatively higher than a transmittance of the electromagnetic waves at a portion where the wiring part is provided in a layer in which the insulator layer is provided.

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