SPIN ELEMENT AND RESERVOIR ELEMENT

    公开(公告)号:US20210249470A1

    公开(公告)日:2021-08-12

    申请号:US16788419

    申请日:2020-02-12

    Abstract: A magnetic recording array includes: a plurality of spin elements each including a wiring and a laminated body having a first ferromagnetic layer laminated on the wiring and arranged in a matrix; a plurality of write wirings connected to first ends of the spin elements' wiring; a plurality of read wirings connected to the laminated bodies of the spin elements; a plurality of common wirings connected to second ends of the wirings of the spin elements belonging to the same column; and a control unit configured to control a write current flowing between first and second ends of each spin element, wherein when data writing is performed continuously, the unit is configured to prohibit writing to at least a spin element connected to the same common wiring as a first spin element and adjacent to the first spin element after the first element to which the current is applied.

    MAGNETIC MEMORY AND METHOD FOR CONTROLLING THE SAME

    公开(公告)号:US20210012820A1

    公开(公告)日:2021-01-14

    申请号:US16921211

    申请日:2020-07-06

    Inventor: Yohei SHIOKAWA

    Abstract: A magnetic memory includes a storage element including a first ferromagnetic layer, a first conductive layer which faces the first ferromagnetic layer in a first direction and extends in a second direction different from the first direction, and a first conductive part and a second conductive part which are connected to the first conductive layer at positions which sandwich the first ferromagnetic layer in the second direction when seen in the first direction; and a plurality of first switching elements which are electrically connected to the first conductive part of the storage element.

    SPIN-ORBIT-TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

    公开(公告)号:US20200350490A1

    公开(公告)日:2020-11-05

    申请号:US16935631

    申请日:2020-07-22

    Inventor: Yohei SHIOKAWA

    Abstract: A spin-orbit-torque type magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer which is located between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit-torque wiring which has the first ferromagnetic layer laminated thereon, wherein the spin-orbit-torque wiring extends in a second direction intersecting a first direction corresponding to an orthogonal direction of the first ferromagnetic layer, wherein the first ferromagnetic layer includes a first laminated structure and an interface magnetic layer in order from the spin-orbit-torque wiring, wherein the first laminated structure is a structure in which a ferromagnetic conductor layer and an inorganic compound containing layer are disposed in order from the spin-orbit-torque wiring, wherein the ferromagnetic conductor layer contains a ferromagnetic metal element, and wherein the inorganic compound containing layer contains at least one inorganic compound selected from a group consisting of carbide, nitride, and sulfide.

    FERROMAGNETIC LAMINATED FILM, SPIN CURRENT MAGNETIZATION ROTATING ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY

    公开(公告)号:US20200321518A1

    公开(公告)日:2020-10-08

    申请号:US16956802

    申请日:2019-02-26

    Abstract: A ferromagnetic laminated film includes a plurality of first magnetic layers, at least one second magnetic layer, and at least one first non-magnetic layer, in which the first magnetic layers are alternately laminated with the second magnetic layer or the first non-magnetic layer, and a material forming the first magnetic layers is different from a material forming the second magnetic layer, and the first magnetic layers, the first non-magnetic layer, and the second magnetic layer are a material combination in which interface magnetic anisotropy is generated between the first magnetic layer and the first non-magnetic layer, and a material combination in which interface magnetic anisotropy is generated between the first magnetic layer and the second magnetic layer.

    SPIN CURRENT MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

    公开(公告)号:US20190067563A1

    公开(公告)日:2019-02-28

    申请号:US16055589

    申请日:2018-08-06

    Abstract: Provided is a spin current magnetoresistance effect element, including: a magnetoresistance effect element including a first ferromagnetic metal layer, a second ferromagnetic metal layer configured for magnetization direction to be changed, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and a spin-orbit torque wiring extending in a first direction which intersects a lamination direction of the magnetoresistance effect element and joined to the second ferromagnetic metal layer, wherein, a third end portion of the non-magnetic layer is located between a first end portion of the first ferromagnetic metal layer and a second end portion of the second ferromagnetic metal layer as viewed from the lamination direction on one of side surfaces of the magnetoresistance effect element.

    SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY

    公开(公告)号:US20180351085A1

    公开(公告)日:2018-12-06

    申请号:US15778577

    申请日:2016-11-25

    Abstract: A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction; and a spin-orbit torque wiring, wherein a first direction is perpendicular to a surface of the layer, the wiring extends in a second direction intersecting the first and is bonded to the layer, wherein the wiring material is a binary alloy represented by the formula AxB1-x, a metal carbide, or metal nitride, wherein A is selected from Al, Ti, and Pt, and B is selected from Al, Cr, Mn, Fe, Co, Ni, Y, Ru, Rh, and Ir and the material has a cubic structure with symmetry of a space group Pm-3m or Fd-3m; or A is selected from Al, Si, Ti, Y, and Ta, and B is selected from C, N, Co, Pt, Au, and Bi and the material has a cubic structure with symmetry of a space group Fm-3m.

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