Invention Application
- Patent Title: METHOD FOR FABRICATING SEMICONDUCTOR DEVICE INVOLVING FORMING EPITAXIAL MATERIAL
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Application No.: US15722801Application Date: 2017-10-02
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Publication No.: US20190103492A1Publication Date: 2019-04-04
- Inventor: Cheng-Pu Chiu , Pei-Yu Chen , Shih-Min Lu , Ming-Yueh Tsai , Yung-Sung Lin , Te-Chang Hsu , Chih-Yi Wang , Chi-Hsuan Cheng , Sheng-Chen Chung , Yao-Jhan Wang
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/161 ; H01L29/165 ; H01L29/20 ; H01L29/267 ; H01L29/66 ; H01L21/02
Abstract:
A method for forming epitaxial material on base material includes forming a stress cap layer on a base layer of a first semiconductor material. Then, a stress is induced on the base layer, wherein the stress is a tensile stress or a compressive stress. The stress cap layer is removed. An epitaxial layer of a second semiconductor material is formed on the base layer, wherein the second semiconductor material is different from the first semiconductor material.
Information query
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