- 专利标题: PROCESS CONTROL METHOD AND PROCESS CONTROL SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE
-
申请号: US16107242申请日: 2018-08-21
-
公开(公告)号: US20190115527A1公开(公告)日: 2019-04-18
- 发明人: Jeong-Heon Park , Yong Sung Park , Joonmyoung Lee , Hyun Cho , Se Chung Oh
- 申请人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2017-0134231 20171016
- 主分类号: H01L43/12
- IPC分类号: H01L43/12 ; G11C11/16 ; G11C11/15 ; H01L43/02
摘要:
Provided are process control methods and process control systems. The method includes performing a deposition process on a lot defined by a group of a plurality of wafers, performing a measurement process on the lot to obtain a measured value with respect to at least one wafer among the plurality of wafers, producing a target value of a factor of a process condition in the deposition process by using a difference between the measured value and a reference value, and providing an input value of the factor with respect to a subsequent lot based on the target value. The operation of providing the input value of the factor includes obtaining a previous target value of the factor previously produced with respect to at least one previous lot, and providing a weighted average of the previous target value and the target value as the input value.
信息查询
IPC分类: