Invention Application
- Patent Title: METHOD OF FORMING TIN-CONTAINING MATERIAL FILM AND METHOD OF SYNTHESIZING A TIN COMPOUND
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Application No.: US16249067Application Date: 2019-01-16
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Publication No.: US20190144472A1Publication Date: 2019-05-16
- Inventor: Seung-min RYU , Youn-soo KIM , Jae-soon LIM , Youn-joung CHO , Myong-woon KIM , Kang-yong LEE , Sang-ick LEE , Sang-yong JEON
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Daejeon
- Assignee: DNF Co., Ltd.
- Current Assignee: DNF Co., Ltd.
- Current Assignee Address: KR Daejeon
- Priority: KR10-2016-0163900 20161202
- Main IPC: C07F7/22
- IPC: C07F7/22 ; C23C16/40 ; C23C16/455
Abstract:
A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.
Public/Granted literature
- US10882873B2 Method of forming tin-containing material film and method of synthesizing a tin compound Public/Granted day:2021-01-05
Information query
