公开(公告)号：US20200296577A1

公开(公告)日：2020-09-17

申请号：US16886403

申请日：2020-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang-yong LEE

IPC: H04W8/24

Abstract: A method, performed by a device configured to perform communication with a base station, and including detecting whether an abnormality of the device occurs in response to an event signal, sending a request to the base station for permission to change a capability of the device based on the detecting that the abnormality occurs, changing the capability of the device based on a permission indication received from the base station in response to the sending the request, sending changed capability information to the base station based on the changing, and performing a radio resource control (RRC) reconfiguration operation based on an RRC reconfiguration message received from the base station in response to the sending the changed capability information.

公开(公告)号：US20190304835A1

公开(公告)日：2019-10-03

申请号：US16442936

申请日：2019-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Woo Sun ,  Ji-Eun YUN ,  Jae-Soon LIM ,  Youn-Joung CHO ,  Myong-Woon KIM ,  Kang-yong LEE ,  Sang-Ick LEE ,  Sung-Woo CHO

IPC: H01L21/768 ,  C23C16/455 ,  H01L21/285 ,  C07F17/00 ,  C07F11/00 ,  C23C16/34 ,  C23C16/18

Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

公开(公告)号：US20190144472A1

公开(公告)日：2019-05-16

申请号：US16249067

申请日：2019-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min RYU ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Myong-woon KIM ,  Kang-yong LEE ,  Sang-ick LEE ,  Sang-yong JEON

IPC: C07F7/22 ,  C23C16/40 ,  C23C16/455

Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.

公开(公告)号：US20180155372A1

公开(公告)日：2018-06-07

申请号：US15827317

申请日：2017-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min RYU ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Myong-woon KIM ,  Kang-yong LEE ,  Sang-ick LEE ,  Sang-yong JEON

IPC: C07F7/22 ,  C23C16/455

CPC classification number: C07F7/2284 ,  C23C16/407 ,  C23C16/45553

Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a Cl to C4 linear or branched alkyl group.