公开(公告)号：US20190144472A1

公开(公告)日：2019-05-16

申请号：US16249067

申请日：2019-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min RYU ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Myong-woon KIM ,  Kang-yong LEE ,  Sang-ick LEE ,  Sang-yong JEON

IPC: C07F7/22 ,  C23C16/40 ,  C23C16/455

Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.

公开(公告)号：US20180076024A1

公开(公告)日：2018-03-15

申请号：US15455879

申请日：2017-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyu-hee PARK ,  Jae-soon LIM ,  Youn-joung CHO ,  Myong-woon KIM ,  Sang-ick LEE ,  Sung-duck LEE ,  Sung-woo CHO

IPC: H01L21/02 ,  H01L21/311 ,  H01L27/11582 ,  C09D1/00 ,  C09D5/24 ,  C07F5/06

CPC classification number: H01L21/02178 ,  C07F5/062 ,  C09D1/00 ,  C09D5/24 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/11582

Abstract: An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.

公开(公告)号：US20180155372A1

公开(公告)日：2018-06-07

申请号：US15827317

申请日：2017-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min RYU ,  Youn-soo KIM ,  Jae-soon LIM ,  Youn-joung CHO ,  Myong-woon KIM ,  Kang-yong LEE ,  Sang-ick LEE ,  Sang-yong JEON

IPC: C07F7/22 ,  C23C16/455

CPC classification number: C07F7/2284 ,  C23C16/407 ,  C23C16/45553

Abstract: A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a Cl to C4 linear or branched alkyl group.