发明申请
- 专利标题: QUANTUM DOT ARRAY DEVICES
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申请号: US16317023申请日: 2016-08-10
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公开(公告)号: US20190229189A1公开(公告)日: 2019-07-25
- 发明人: James S. Clarke , Robert L. Bristol , Ravi Pillarisetty , Jeanette M. Roberts , Hubert C. George , Nicole K. Thomas
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 国际申请: PCT/US2016/046236 WO 20160810
- 主分类号: H01L29/12
- IPC分类号: H01L29/12 ; H01L29/82 ; H01L29/423 ; H01L29/66 ; H01L29/06 ; H01L29/165 ; H01L29/778
摘要:
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer; a plurality of gates disposed above the quantum well stack, wherein at least two of the gates are spaced apart in a first dimension above the quantum well stack, at least two of the gates are spaced apart in a second dimension above the quantum well stack, and the first and second dimensions are perpendicular; and an insulating material disposed above the quantum well stack, wherein the insulating material extends between at least two of the gates spaced apart in the first dimension, and the insulating material extends between at least two of the gates spaced apart in the second dimension.
公开/授权文献
- US11594599B2 Quantum dot array devices 公开/授权日:2023-02-28
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