- 专利标题： MAGNETO-RESISTANCE ELEMENT IN WHICH I-III-VI2 COMPOUND SEMICONDUCTOR IS USED, METHOD FOR MANUFACTURING SAID MAGNETO-RESISTANCE ELEMENT, AND MAGNETIC STORAGE DEVICE AND SPIN TRANSISTOR IN WHICH SAID MAGNETO-RESISTANCE ELEMENT IS USED
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申请号： US16311367申请日： 2017-06-23
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公开(公告)号： US20190237099A1公开(公告)日： 2019-08-01
- 发明人: Shinya KASAI , Yukiko TAKAHASHI , Pohan CHENG , IKHTIAR , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO
- 申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- 申请人地址： JP Ibaraki
- 专利权人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- 当前专利权人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- 当前专利权人地址： JP Ibaraki
- 优先权： JP2016-125316 20160624
- 国际申请： PCT/JP2017/023140 WO 20170623
- 主分类号： G11B5/39
- IPC分类号： G11B5/39 ; H01F10/13 ; H01F10/16 ; H01F10/30 ; H01L29/82 ; H01L43/08 ; H01L43/10 ; H01L43/12
摘要：
An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm2] or more and 3 [Ωμm2] or less.
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