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公开(公告)号:US20190237099A1
公开(公告)日:2019-08-01
申请号:US16311367
申请日:2017-06-23
发明人: Shinya KASAI , Yukiko TAKAHASHI , Pohan CHENG , IKHTIAR , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO
IPC分类号: G11B5/39 , H01F10/13 , H01F10/16 , H01F10/30 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号: G11B5/3909 , G11B5/39 , H01F10/13 , H01F10/132 , H01F10/16 , H01F10/30 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
摘要: An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm2] or more and 3 [Ωμm2] or less.