发明申请
- 专利标题: TRANSISTOR STRUCTURE
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申请号: US15924001申请日: 2018-03-16
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公开(公告)号: US20190245041A1公开(公告)日: 2019-08-08
- 发明人: Yen-Ming Chen , Chiu-Ling Lee , Min-Hsuan Tsai , Chiu-Te Lee , Chih-Chung Wang
- 申请人: United Microelectronics Corp.
- 申请人地址: TW Hsinchu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Hsinchu
- 优先权: CN201810123483.2 20180207
- 主分类号: H01L29/10
- IPC分类号: H01L29/10 ; H01L29/06 ; H01L29/08 ; H01L29/78
摘要:
A transistor structure including a substrate, a transistor device, a split buried layer, and a second buried layer is provided. The substrate has a device region. The transistor device is located in the device region. The split buried layer is located under the transistor device in the substrate and includes first buried layers separated from each other. The second buried layer is located under the split buried layer in the substrate and connects the first buried layers. The second buried layer and the split buried layer have a first conductive type. The transistor structure may have a higher breakdown voltage.
公开/授权文献
- US10431655B2 Transistor structure 公开/授权日:2019-10-01