Invention Application
- Patent Title: METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
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Application No.: US16416279Application Date: 2019-05-20
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Publication No.: US20190279909A1Publication Date: 2019-09-12
- Inventor: Chia-Lin Lu , Chun-Lung Chen , Kun-Yuan Liao , Chun-Hsien Lin , Wei-Hao Huang , Kai-Teng Cheng
- Applicant: UNITED MICROELECTRONICS CORP.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/30 ; H01L21/321 ; H01L21/28
Abstract:
The present invention provides a method for forming a semiconductor structure. The method including: Firstly, a substrate is provided, a first region and a second region are defined thereon, next, a gate dielectric layer and a work function metal layer are sequentially formed on the substrate within the first region and within the second region. Afterwards, a dielectric layer is formed on the work function metal layer within the second region, a hydrogen gas treatment is then performed on the substrate, and the work function metal layer is removed within the first region.
Public/Granted literature
- US10854520B2 Method for forming semiconductor structure Public/Granted day:2020-12-01
Information query
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