- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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申请号： US16432298申请日： 2019-06-05
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公开(公告)号： US20190312119A1公开(公告)日： 2019-10-10
- 发明人: Eunae CHO , Dongjin Lee , Ji Eun Lee , Kyoung-Ho Jung , Dong Su Ko , Yongsu Kim , Jiho Yoo , Sung Heo , Hyun Park , Satoru Yamada , Moonyoung Jeong , Sungjin Kim , Gyeongsu Park , Han Jin Lim
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2015-0029219 20150302
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/51 ; H01L29/49 ; H01L21/28
摘要：
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
公开/授权文献
- US11127828B2 Semiconductor device and method of manufacturing the same 公开/授权日：2021-09-21
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