- 专利标题: SEMICONDUCTOR MEMORY DEVICE WHICH STORES PLURAL DATA IN A CELL
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申请号: US16539205申请日: 2019-08-13
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公开(公告)号: US20190362781A1公开(公告)日: 2019-11-28
- 发明人: Noboru Shibata , Tomoharu Tanaka
- 申请人: TOSHIBA MEMORY CORPORATION
- 申请人地址: JP Minato-ku
- 专利权人: TOSHIBA MEMORY CORPORATION
- 当前专利权人: TOSHIBA MEMORY CORPORATION
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2004-024475 20040130; JP2004-160165 20040528
- 主分类号: G11C11/56
- IPC分类号: G11C11/56 ; G11C16/10 ; G11C16/34 ; G11C16/12 ; G11C16/04
摘要:
A memory cell array is configured to have a plurality of memory cells arranged in a matrix, each of the memory cells being connected to a word line and a bit line and being capable of storing n values (n is a natural number equal to or larger than 3). A control circuit controls the potentials of the word line and bit line according to input data and writes data into a memory cell. The control circuit writes data into the memory cell to a k-valued threshold voltage (k
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