- 专利标题： FILM FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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申请号： US16512447申请日： 2019-07-16
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公开(公告)号： US20200027731A1公开(公告)日： 2020-01-23
- 发明人: Tatsuji NAGAOKA , Hiroyuki NISHINAKA , Masahiro YOSHIMOTO
- 申请人： Tatsuji NAGAOKA , Hiroyuki NISHINAKA , Masahiro YOSHIMOTO
- 申请人地址： JP Toyota-shi JP Kyoto-shi
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA,NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
- 当前专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA,NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
- 当前专利权人地址： JP Toyota-shi JP Kyoto-shi
- 优先权： JP2018-134347 20180717
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; C23C16/40 ; C30B29/16 ; C30B25/20
摘要：
A film forming method of forming a gallium oxide film doped with tin on a substrate is disclosed herein. The film forming method may include supplying mist of a solution to a surface of the substrate while heating the substrate, wherein a gallium compound and a tin chloride (IV) pentahydrate are dissolved in the solution.
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