- 专利标题: FINFET AND GATE-ALL-AROUND FET WITH SELECTIVE HIGH-K OXIDE DEPOSITION
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申请号: US16048833申请日: 2018-07-30
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公开(公告)号: US20200035800A1公开(公告)日: 2020-01-30
- 发明人: Tsung-Han TSAI , Jen-Hsiang LU , Shih-Hsun CHANG
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L29/423
- IPC分类号: H01L29/423 ; H01L29/786 ; H01L29/78 ; H01L29/40 ; H01L21/02 ; H01L29/66
摘要:
A method of forming a semiconductor device structure is provided. The method includes forming an isolation feature over a semiconductor substrate. The semiconductor substrate includes a fin structure over the isolation feature. Two opposing spacer elements are formed over the isolation feature and across the fin structure so as to define a gate opening. The gate opening exposes the fin structure and the isolation feature and inner sidewalls of the gate opening have carbon-containing hydrophobic surfaces. A gate structure is formed in the gate opening with the carbon-containing hydrophobic surfaces.
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