公开(公告)号：US20200303511A1

公开(公告)日：2020-09-24

申请号：US16889245

申请日：2020-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Han TSAI ,  Jen-Hsiang LU ,  Shih-Hsun CHANG

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L29/40 ,  H01L21/02 ,  H01L29/78

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin structure formed over a semiconductor substrate and a gate structure formed across the fin structure. The semiconductor device structure also includes an isolation feature over a semiconductor substrate and below a portion of the gate structure and two spacer elements respectively formed over a first sidewall and a second sidewall of the gate structure. In addition, the first sidewall is opposite to the second sidewall and the two spacer elements have hydrophobic surfaces respectively facing the first sidewall and the second sidewall, and the gate structure includes a gate dielectric layer and a gate electrode layer separating the gate dielectric layer from the hydrophobic surfaces of the two spacer elements.

公开(公告)号：US20200083092A1

公开(公告)日：2020-03-12

申请号：US16686124

申请日：2019-11-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Hua YEN ,  Ching-Hung KAO ,  Po-Jen WANG ,  Tsung-Han TSAI

IPC: H01L21/762 ,  H01L21/84 ,  H01L21/8238 ,  H01L21/764 ,  H01L21/311 ,  H01L21/306 ,  H01L27/12 ,  H01L29/06

Abstract: A method includes forming an isolation region between a plurality of active regions of a semiconductor substrate, forming at least one deep trench extending from the isolation region toward a bottom of the semiconductor substrate, and forming an interlayer dielectric layer over the semiconductor substrate. The interlayer dielectric layer fills in the deep trench to form a deep trench isolation structure and an air void in the deep trench isolation structure.

公开(公告)号：US20200035800A1

公开(公告)日：2020-01-30

申请号：US16048833

申请日：2018-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Han TSAI ,  Jen-Hsiang LU ,  Shih-Hsun CHANG

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/78 ,  H01L29/40 ,  H01L21/02 ,  H01L29/66

Abstract: A method of forming a semiconductor device structure is provided. The method includes forming an isolation feature over a semiconductor substrate. The semiconductor substrate includes a fin structure over the isolation feature. Two opposing spacer elements are formed over the isolation feature and across the fin structure so as to define a gate opening. The gate opening exposes the fin structure and the isolation feature and inner sidewalls of the gate opening have carbon-containing hydrophobic surfaces. A gate structure is formed in the gate opening with the carbon-containing hydrophobic surfaces.

公开(公告)号：US20190067124A1

公开(公告)日：2019-02-28

申请号：US15692072

申请日：2017-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Han TSAI ,  Po-Jen WANG ,  Chun-Li WU ,  Ching-Hung KAO

IPC: H01L21/8238 ,  H01L21/02 ,  H01L29/78 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/16 ,  H01L29/51

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate. The substrate includes a first semiconductor layer, a second semiconductor layer, and an insulating layer between the first semiconductor layer and the second semiconductor layer. The semiconductor device structure also includes a gate stack over the substrate. The semiconductor device structure further includes source and drain structures in the second semiconductor layer of the substrate. The source and drain structures are on opposite sides of the gate stack. In addition, the semiconductor device structure includes a first isolation feature in the substrate. The first isolation feature includes an insulation material and surrounds the source and drain structures. The semiconductor device structure also includes a second isolation feature in the first isolation feature. The second isolation feature includes a metal material and surrounds the source and drain structures.

公开(公告)号：US20170125459A1

公开(公告)日：2017-05-04

申请号：US14925576

申请日：2015-10-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Bo-Tsung TSAI ,  Chun-Hao CHOU ,  Tsung-Han TSAI ,  Kuo-Cheng LEE ,  Yung-Lung HSU ,  Yun-Wei CHENG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A CMOS image sensor structure includes a substrate and pixel portions. Each pixel portion includes intersection areas, the border areas each of which is located between any two adjacent ones of the intersection areas, and a central area surrounded by the intersection areas and the border areas. Each pixel portion includes a device layer, an anti-reflective coating layer, discrete reflective structures, discrete metal blocking structures, a passivation layer and a color filter. The device layer is disposed on the substrate. Trenches are formed in the device layer and the substrate corresponding to the border areas respectively. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed in the trenches. The metal blocking structures overly the anti-reflective coating layer in the intersection areas. The passivation layer conformally covers the metal blocking structures. The color filter is disposed on the passivation layer.

公开(公告)号：US20170069678A1

公开(公告)日：2017-03-09

申请号：US14849311

申请日：2015-09-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Tsung-Han TSAI ,  Kuo-Cheng LEE ,  Volume CHIEN ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, a device layer, a composite grid structure, a passivation layer and color filters. The device layer overlies the substrate. The composite grid structure overlies the device layer. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer stacked on the metal grid layer. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.

Abstract translation: 半导体器件包括衬底，器件层，复合栅格结构，钝化层和滤色器。 器件层覆盖衬底。 复合网格结构覆盖设备层。 复合栅格结构包括通过复合栅格结构的空穴，并且复合栅格结构包括金属栅格层和堆叠在金属栅格层上的电介质栅格层。 钝化层保形地覆盖复合网格结构。 滤色器分别填充空腔。

公开(公告)号：US20190157407A1

公开(公告)日：2019-05-23

申请号：US16035128

申请日：2018-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Gulbagh SINGH ,  Tsung-Han TSAI ,  Kun-Tsang Chuang

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06

Abstract: The present disclosure relates to a semiconductor structure includes a substrate with a top surface and first and second devices formed on the top surface of the substrate. The semiconductor structure also includes a deep isolation structure formed in the substrate and between the first and second devices. The deep isolation structure includes a top portion formed at the top surface and having a top width and a bottom surface having a bottom width larger than the top width.

公开(公告)号：US20180026061A1

公开(公告)日：2018-01-25

申请号：US15721201

申请日：2017-09-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Bo-Tsung TSAI ,  Chun-Hao CHOU ,  Tsung-Han TSAI ,  Kuo-Cheng LEE ,  Yung-Lung HSU ,  Yun-Wei CHENG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A CMOS image sensor structure includes a substrate and pixel portions. Each pixel portion includes intersection areas, the border areas each of which is located between any two adjacent ones of the intersection areas, and a central area surrounded by the intersection areas and the border areas. Each pixel portion includes a device layer, an anti-reflective coating layer, discrete reflective structures, discrete metal blocking structures, a passivation layer and a color filter. The device layer is disposed on the substrate. Trenches are formed in the device layer and the substrate corresponding to the border areas respectively. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed in the trenches. The metal blocking structures overly the anti-reflective coating layer in the intersection areas. The passivation layer conformally covers the metal blocking structures. The color filter is disposed on the passivation layer.

公开(公告)号：US20170301720A1

公开(公告)日：2017-10-19

申请号：US15635318

申请日：2017-06-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han TSAI ,  Kun-Huei LIN ,  Chun-Hao CHOU ,  Tzu-Hsuan HSU ,  Ching-Chun WANG ,  Kuo-Cheng LEE ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.

公开(公告)号：US20170110494A1

公开(公告)日：2017-04-20

申请号：US15171959

申请日：2016-06-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han TSAI ,  Yun-Wei CHENG ,  Kuo-Cheng LEE ,  Chun-Hao CHOU ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14654 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.