Invention Application
- Patent Title: THREE-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURES
-
Application No.: US16601588Application Date: 2019-10-15
-
Publication No.: US20200043861A1Publication Date: 2020-02-06
- Inventor: Jie Chen , Hsien-Wei Chen , Ying-Ju Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L25/065 ; H01L23/528 ; H01L23/522

Abstract:
Three-dimensional integrated circuit (3DIC) structures are disclosed. A 3DIC structure includes a first die and a second die bonded to the first die. The first die includes a first integrated circuit region and a first seal ring region around the first integrated circuit region, and has a first alignment mark within the first integrated circuit region. The second die includes a second integrated circuit region and a second seal ring region around the second integrated circuit region, and has a second alignment mark within the second seal ring region and corresponding to the first alignment mark.
Public/Granted literature
- US10797001B2 Three-dimensional integrated circuit structures Public/Granted day:2020-10-06
Information query
IPC分类: