- 专利标题: Selective Growth for High-Aspect Ratio Metal Fill
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申请号: US16668871申请日: 2019-10-30
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公开(公告)号: US20200066911A1公开(公告)日: 2020-02-27
- 发明人: Chih-Nan Wu , Shiu-Ko JangJian , Chun Che Lin , Wen-Cheng Hsuku
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/28 ; H01L21/285 ; H01L29/66 ; H01L21/3213 ; H01L29/49 ; H01L29/423 ; H01L23/485 ; H01L21/768 ; H01L29/51 ; H01L21/321 ; H01L29/417
摘要:
An improved conductive feature for a semiconductor device and a technique for forming the feature are provided. In an exemplary embodiment, the semiconductor device includes a substrate having a gate structure formed thereupon. The gate structure includes a gate dielectric layer disposed on the substrate, a growth control material disposed on a side surface of the gate structure, and a gate electrode fill material disposed on the growth control material. The gate electrode fill material is also disposed on a bottom surface of the gate structure that is free of the growth control material. In some such embodiments, the gate electrode fill material contacts a first surface and a second surface that are different in composition.
公开/授权文献
- US11257953B2 Selective growth for high-aspect ratio metal fill 公开/授权日:2022-02-22