- 专利标题: SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES
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申请号: US16679012申请日: 2019-11-08
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公开(公告)号: US20200075784A1公开(公告)日: 2020-03-05
- 发明人: Seung Bum Rim , David D. Smith , Taiqing Qiu , Staffan Westerberg , Kieran Mark Tracy , Venkatasubramani Balu
- 申请人: SunPower Corporation
- 主分类号: H01L31/0224
- IPC分类号: H01L31/0224 ; H01L31/0216 ; H01L31/18 ; H01L31/0368 ; H01L31/0236 ; H01L31/0747 ; H01L31/0745 ; H01L31/068 ; H01L31/20
摘要:
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.
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