Some embodiments include a method of forming stacked memory decks. A first deck has first memory cells arranged in first tiers disposed one atop another, and has a first channel-material pillar extending through the first tiers. An inter-deck structure is over the first deck. The inter-deck structure includes an insulative expanse, and a region extending through the insulative expanse and directly over the first channel-material pillar. The region includes an etch-stop structure. A second deck is formed over the inter-deck structure. The second deck has second memory cells arranged in second tiers disposed one atop another. An opening is formed to extend through the second tiers and to the etch-stop structure. The opening is subsequently extended through the etch-stop structure. A second channel-material pillar is formed within the opening and is coupled to the first channel-material pillar. Some embodiments include integrated assemblies.