发明申请
- 专利标题: TIPLESS TRANSISTORS, SHORT-TIP TRANSISTORS, AND METHODS AND CIRCUITS THEREFOR
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申请号: US16745896申请日: 2020-01-17
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公开(公告)号: US20200152626A1公开(公告)日: 2020-05-14
- 发明人: David A. Kidd
- 申请人: United Semiconductor Japan Co., Ltd.
- 申请人地址: JP Kuwana-shi
- 专利权人: United Semiconductor Japan Co., Ltd.
- 当前专利权人: United Semiconductor Japan Co., Ltd.
- 当前专利权人地址: JP Kuwana-shi
- 主分类号: H01L27/088
- IPC分类号: H01L27/088 ; H01L27/092 ; H01L21/8238 ; H01L21/8234 ; H03K3/356 ; H03K5/05 ; H03L7/081 ; G11C7/06 ; H01L29/10 ; G11C7/08 ; H03L7/08 ; H03K5/06 ; H01L29/78 ; H01L29/423 ; H01L29/36 ; H03K17/687
摘要:
An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.
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