Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US16660976Application Date: 2019-10-23
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Publication No.: US20200161294A1Publication Date: 2020-05-21
- Inventor: Dong Jin LEE , Ji Young KIM , Bong Soo KIM , Hyeon Kyun NOH , Moon Young JEONG
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1609e739
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/22 ; H01L27/12 ; H01L27/108

Abstract:
A semiconductor device is provided. The semiconductor device includes a first substrate, an active region defined by an isolation film in the first substrate, an oxide semiconductor layer on the first substrate in the active region, and not comprising silicon, a recess inside the oxide semiconductor layer, and a gate structure filling the recess, comprising a gate electrode and a capping film on the gate electrode, and having an upper surface on a same plane as an upper surface of the active region.
Public/Granted literature
- US11282833B2 Semiconductor device Public/Granted day:2022-03-22
Information query
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