公开(公告)号：US20200161294A1

公开(公告)日：2020-05-21

申请号：US16660976

申请日：2019-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Jin LEE ,  Ji Young KIM ,  Bong Soo KIM ,  Hyeon Kyun NOH ,  Moon Young JEONG

IPC: H01L27/06 ,  H01L29/22 ,  H01L27/12 ,  H01L27/108

Abstract: A semiconductor device is provided. The semiconductor device includes a first substrate, an active region defined by an isolation film in the first substrate, an oxide semiconductor layer on the first substrate in the active region, and not comprising silicon, a recess inside the oxide semiconductor layer, and a gate structure filling the recess, comprising a gate electrode and a capping film on the gate electrode, and having an upper surface on a same plane as an upper surface of the active region.