• Patent Title: PLASMA PROCESSING APPARATUS, CALCULATION METHOD, AND CALCULATION PROGRAM
  • Application No.: US16698079
    Application Date: 2019-11-27
  • Publication No.: US20200176228A1
    Publication Date: 2020-06-04
  • Inventor: Shinsuke OKA
  • Applicant: TOKYO ELECTRON LIMITED
  • Applicant Address: JP Tokyo
  • Assignee: TOKYO ELECTRON LIMITED
  • Current Assignee: TOKYO ELECTRON LIMITED
  • Current Assignee Address: JP Tokyo
  • Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6b19ce41 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4839cea
  • Main IPC: H01J37/32
  • IPC: H01J37/32 H01L21/67
PLASMA PROCESSING APPARATUS, CALCULATION METHOD, AND CALCULATION PROGRAM
Abstract:
In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.
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