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公开(公告)号：US20230023700A1
公开(公告)日：2023-01-26
申请号：US17958962
申请日：2022-10-03
Applicant: Tokyo Electron Limited.
Inventor： Shinsuke OKA
Abstract: In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.
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公开(公告)号：US20230099398A1
公开(公告)日：2023-03-30
申请号：US17949004
申请日：2022-09-20
Applicant: Tokyo Electron Limited
Inventor： Shinsuke OKA
IPC: H01J37/32
Abstract: There is a substrate support comprising: a base; an electrostatic chuck disposed on the base and having a substrate supporting surface to support the substrate; and an edge ring disposed to surround the substrate on the substrate supporting surface, wherein the electrostatic chuck has a ring supporting surface to support the edge ring, and an inner edge side of the ring supporting surface is lower than an outer edge side of the ring supporting surface.
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公开(公告)号：US20190259578A1
公开(公告)日：2019-08-22
申请号：US16275848
申请日：2019-02-14
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shinsuke OKA
Abstract: A cleaning method removes a silicon oxide film by plasma from a member that is provided in a processing container of a plasma processing apparatus and having the silicon oxide film formed on its surface. The cleaning method includes: supplying a processing gas into the processing container; generating plasma of the processing gas that is supplied into the processing container; and applying bias power that draws ions in the plasma of the processing gas to the member. A ratio of a value of the bias power to a pressure in the processing container is 1.0 W/mTorr or less.
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4.发明申请公开(公告)号：US20190252224A1
公开(公告)日：2019-08-15
申请号：US16273622
申请日：2019-02-12
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shinsuke OKA
CPC classification number: H01L21/67253 , H01J37/321 , H01J37/32174 , H01J37/32449 , H01L21/67069 , H01L22/12
Abstract: An upper electrode is disposed in a processing container to face a wafer and configured to adjust a flow rate of a processing gas for each of divided regions obtained by dividing a facing surface that faces the wafer. A calculator calculates a target flow rate of the processing gas of each of the divided regions where a critical dimension (CD) of a measurement point satisfies a predetermined condition using a prediction model for predicting the CD at a predetermined measurement point of the wafer when plasma etching is performed on the wafer using the flow rate of the processing gas in each of the divided regions as a parameter. A flow rate controller performs a flow rate control such that the flow rate of the processing gas supplied from each of the divided regions of the upper electrode becomes the calculated target flow rate.
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公开(公告)号：US20240274412A1
公开(公告)日：2024-08-15
申请号：US18641911
申请日：2024-04-22
Applicant: Tokyo Electron Limited
Inventor： Shinsuke OKA , Akira TAKAHASHI , Daisuke TAMURA , Tsubasa SHIMOMURA
IPC: H01J37/32
CPC classification number: H01J37/32642 , H01J37/3244 , H01J37/32724 , H01J37/32183 , H01J2237/2007
Abstract: With respect to a method of reducing leakage of a heat transfer gas, the method includes mounting an edge ring on a main body including an electrostatic chuck; attracting the edge ring to the electrostatic chuck; increasing a temperature of the edge ring; decreasing the temperature of the edge ring; and repeating the increasing of the temperature and the decreasing of the temperature a plurality of times.
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Patent Agency Ranking
6.发明公开公开(公告)号：US20240186125A1
公开(公告)日：2024-06-06
申请号：US18442022
申请日：2024-02-14
Applicant: TOKYO ELECTRON LIMITED
Inventor： Daisuke HAYASHI , Yoshihiro UMEZAWA , Shinsuke OKA
CPC classification number: H01J37/32935 , G05D23/1917 , G05D23/193 , G08B21/18 , H01J37/32724 , H01J37/32926 , H01J37/32944 , H01J37/3299 , H05B1/023 , H05B1/0233 , H01J2237/24585 , H01J2237/334 , H05B2203/005
Abstract: A measurement part controls power supplied to a heater such that a temperature of the heater becomes constant by using a heater controller, and measures the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited. A parameter calculator performs fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and calculates the heat input amount. An output part configured to output information based on the heat input amount calculated by the parameter calculator
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公开(公告)号：US20200176228A1
公开(公告)日：2020-06-04
申请号：US16698079
申请日：2019-11-27
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shinsuke OKA
Abstract: In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.
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公开(公告)号：US20240258082A1
公开(公告)日：2024-08-01
申请号：US18629113
申请日：2024-04-08
Applicant: Tokyo Electron Limited
Inventor： Shinsuke OKA
IPC: H01J37/32
CPC classification number: H01J37/32715 , H01J37/32091 , H01J37/32743 , H01J37/32899 , H01J2237/24585 , H01J2237/336
Abstract: A substrate holding method includes loading a first substrate into a first chamber and placing the first substrate on an electrostatic chuck disposed in the first chamber; applying a first voltage to an electrostatic electrode of the electrostatic chuck to attract the first substrate to the electrostatic chuck; unloading the electrostatic chuck from the first chamber; grinding a front surface of the electrostatic chuck; disposing the electrostatic chuck in a second chamber; placing the second substrate on the electrostatic chuck disposed in the second chamber; applying a second voltage smaller than the first voltage to the electrostatic electrode to attract the second substrate to the electrostatic chuck; and before the attracting of the second substrate, calculating a value of the second voltage by using a value of the first voltage and a value of a thickness of a dielectric of the electrostatic chuck disposed in the second chamber.
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公开(公告)号：US20220068615A1
公开(公告)日：2022-03-03
申请号：US17462787
申请日：2021-08-31
Applicant: Tokyo Electron Limited
Inventor： Shinsuke OKA
IPC: H01J37/32
Abstract: A stage includes a first placement table on which a substrate is placed, and a second placement table configured to place thereon a ring-shaped edge ring arranged around the substrate. The second placement table includes an electrostatic clamping electrode configured to clamp the edge ring by being applied with a voltage, and a temperature adjuster provided on at least one of an inner peripheral side and an outer peripheral side of the edge ring with respect to the electrostatic clamping electrode.
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10.发明申请公开(公告)号：US20210020418A1
公开(公告)日：2021-01-21
申请号：US16978134
申请日：2019-06-17
Applicant: TOKYO ELECTRON LIMITED
Inventor： Daisuke HAYASHI , Yoshihiro UMEZAWA , Shinsuke OKA
Abstract: A measurement part controls power supplied to a heater such that a temperature of the heater becomes constant by using a heater controller, and measures the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited. A parameter calculator performs fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and calculates the heat input amount. An output part configured to output information based on the heat input amount calculated by the parameter calculator.
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