• Patent Title: PROCESS FOR TRANSFERRING A THIN LAYER TO A SUPPORT SUBSTRATE THAT HAVE DIFFERENT THERMAL EXPANSION COEFFICIENTS
  • Application No.: US16618696
    Application Date: 2018-06-21
  • Publication No.: US20200186117A1
    Publication Date: 2020-06-11
  • Inventor: Isabelle HuyetCedric Charles-AlfredDidier LandruAlexis Drouin
  • Applicant: Soitec
  • Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@703d0e20
  • International Application: PCT/EP2018/066552 WO 20180621
  • Main IPC: H03H3/10
  • IPC: H03H3/10 H01L41/187 H01L41/312
PROCESS FOR TRANSFERRING A THIN LAYER TO A SUPPORT SUBSTRATE THAT HAVE DIFFERENT THERMAL EXPANSION COEFFICIENTS
Abstract:
A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.
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