Invention Application
- Patent Title: PROCESS FOR TRANSFERRING A THIN LAYER TO A SUPPORT SUBSTRATE THAT HAVE DIFFERENT THERMAL EXPANSION COEFFICIENTS
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Application No.: US16618696Application Date: 2018-06-21
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Publication No.: US20200186117A1Publication Date: 2020-06-11
- Inventor: Isabelle Huyet , Cedric Charles-Alfred , Didier Landru , Alexis Drouin
- Applicant: Soitec
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@703d0e20
- International Application: PCT/EP2018/066552 WO 20180621
- Main IPC: H03H3/10
- IPC: H03H3/10 ; H01L41/187 ; H01L41/312

Abstract:
A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.
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