发明申请
- 专利标题： ION-SENSITIVE FIELD-EFFECT TRANSISTOR WITH MICRO-PILLAR WELL TO ENHANCE SENSITIVITY
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申请号： US16378844申请日： 2019-04-09
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公开(公告)号： US20200328088A1公开(公告)日： 2020-10-15
- 发明人: Juntao Li , Kangguo Cheng , Ruilong Xie , Chanro Park
- 申请人： International Business Machines Corporation
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L29/423 ; H01L27/092 ; H01L21/033 ; H01L21/3205 ; G01N27/414
摘要：
A semiconductor device includes a first passivation layer disposed on a semiconductor base. The semiconductor device further includes a dielectric layer disposed on the first passivation layer. The semiconductor device further includes a plurality of pillars disposed in an opening in the dielectric layer and the first passivation layer and from a top surface of the semiconductor base. The semiconductor device further includes a metal layer disposed on the exterior surfaces of the plurality of pillars and sidewalls of the dielectric layer and the first passivation layer and on the exposed top surface of the semiconductor base. The semiconductor device further includes a second passivation layer disposed on the metal layer and a top surface of the semiconductor device; wherein the second passivation layer has an electrical charge.
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