Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US16921379Application Date: 2020-07-06
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Publication No.: US20200335491A1Publication Date: 2020-10-22
- Inventor: Kenji SASAKI , Takayuki TSUTSUI , Isao OBU , Yasuhisa YAMAMOTO
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3a8a271f com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@734076ae
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H03F3/213 ; H01L23/00 ; H01L29/423 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H03F1/52 ; H03F3/195 ; H01L29/861 ; H01L29/06 ; H01L29/737

Abstract:
An amplifier circuit including a semiconductor element is formed on a substrate. A protection circuit is formed including a plurality of protection diodes that are formed on the substrate and that are connected in series with each other, the protection circuit being connected to an output terminal of the amplifier circuit. A pad conductive layer is formed that at least partially includes a pad for connecting to a circuit outside the substrate. An insulating protective film covers the pad conductive layer. The insulating protective film includes an opening that exposes a partial area of a surface of the pad conductive layer, and that covers another area. A first bump is formed on the pad conductive layer on a bottom surface of the opening, and a second bump at least partially overlaps the protection circuit in plan view and is connected to a ground (GND) potential connected to the amplifier circuit.
Public/Granted literature
- US11227862B2 Semiconductor device Public/Granted day:2022-01-18
Information query
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