公开(公告)号：US20220103143A1

公开(公告)日：2022-03-31

申请号：US17460543

申请日：2021-08-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shigeki KOYA ,  Takayuki TSUTSUI

IPC: H03F3/72 ,  H03F3/24 ,  H03F3/195 ,  H03F1/56

Abstract: A power amplification circuit includes first wiring supplied with a first signal having a first frequency, second wiring supplied with a second signal having a second frequency that differs from the first frequency, a first amplification circuit that amplifies the first signal supplied through the first wiring and supplies a first amplified signal to the second wiring, and a second amplification circuit that amplifies the signal supplied through the second wiring and outputs a second amplified signal.

公开(公告)号：US20220060157A1

公开(公告)日：2022-02-24

申请号：US17374403

申请日：2021-07-13

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takayuki TSUTSUI ,  Satoshi TANAKA

IPC: H03F3/21 ,  H03F1/56

Abstract: A radio-frequency amplifier circuit includes a first amplifier transistor configured to amplify and output a radio-frequency signal supplied to a base of the first amplifier transistor, a first bias transistor that is connected to the first amplifier transistor to form a current mirror and configured to supply a bias to the base of the first amplifier transistor, a second bias transistor that is connected to the base of the first amplifier transistor to form an emitter follower and configured to supply a bias to the base of the first amplifier transistor, and a first capacitor having a first end connected to the base of the first amplifier transistor and a second end connected to an emitter of the second bias transistor.

公开(公告)号：US20220029004A1

公开(公告)日：2022-01-27

申请号：US17495588

申请日：2021-10-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Yasunari UMEMOTO ,  Masahiro SHIBATA ,  Shigeki KOYA ,  Masao KONDO ,  Takayuki TSUTSUI

IPC: H01L29/737 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L21/306 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311 ,  H01L21/308 ,  H01L29/66 ,  H03F3/213 ,  H03F3/195 ,  H01L29/205 ,  H03F3/21 ,  H03F1/56 ,  H03F3/24 ,  H01L23/00

Abstract: A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

公开(公告)号：US20210235392A1

公开(公告)日：2021-07-29

申请号：US17229412

申请日：2021-04-13

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Satoshi TANAKA ,  Kiichiro TAKENAKA ,  Takayuki TSUTSUI ,  Taizo YAMAWAKI ,  Shun IMAI

IPC: H04W52/24 ,  H04W52/02 ,  H03F3/189 ,  H03F3/24 ,  H04B1/04 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21

Abstract: A high-frequency signal processing apparatus and a wireless communication apparatus can achieve a decrease in power consumption. For example, when an indicated power level to a high-frequency power amplifier is equal to or greater than a second reference value, envelope tracking is performed by causing a source voltage control circuit to control a high-speed DCDC converter using a detection result of an envelope detecting circuit and causing a bias control circuit to indicate a fixed bias value. The source voltage control circuit and the bias control circuit indicate a source voltage and a bias value decreasing in proportion to a decrease in the indicated power level when the indicated power level is in a range of the second reference value to the first reference value, and indicate a fixed source voltage and a fixed bias value when the indicated power level is less than the first reference value.

公开(公告)号：US20210183854A1

公开(公告)日：2021-06-17

申请号：US17188961

申请日：2021-03-01

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Shigeki KOYA ,  Yasunari UMEMOTO ,  Takayuki TSUTSUI

IPC: H01L27/082 ,  H01L23/00 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L29/66 ,  H01L23/498 ,  H01L21/8252

Abstract: A semiconductor device has a semiconductor substrate, and multiple first bipolar transistors on the first primary surface side of the semiconductor substrate. The first bipolar transistors have a first height between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. The semiconductor device further has at least one second bipolar transistor on the first primary surface side of the semiconductor substrate. The second bipolar transistor have a second height, greater than the first height, between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. Also, the semiconductor has a first bump stretching over the multiple first bipolar transistors and the at least one second bipolar transistor.

公开(公告)号：US20210044256A1

公开(公告)日：2021-02-11

申请号：US17082990

申请日：2020-10-28

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shigeki KOYA ,  Takayuki TSUTSUI ,  Yasunari UMEMOTO ,  Isao OBU ,  Satoshi TANAKA

IPC: H03F1/32 ,  H03G3/00 ,  H03F1/02 ,  H03F1/56 ,  H03F3/24 ,  H03F3/19 ,  H03F3/21 ,  H03G3/30

Abstract: A power amplifier module includes a first amplifier circuit that amplifies a radio frequency signal with a first gain corresponding to a first control signal to generate a first amplified signal; a second amplifier circuit that amplifies the first amplified signal with a second gain corresponding to a second control signal to generate a second amplified signal; and a control unit that generates the first control signal and the second control signal. The second control signal is a control signal for increasing a power-supply voltage for the second amplifier circuit as a peak-to-average power ratio of the radio frequency signal increases. The first control signal is a control signal for controlling the first gain of the first amplifier circuit so that a variation in the second gain involved in a variation in the power-supply voltage for the second amplifier circuit is compensated for.

公开(公告)号：US20200335491A1

公开(公告)日：2020-10-22

申请号：US16921379

申请日：2020-07-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kenji SASAKI ,  Takayuki TSUTSUI ,  Isao OBU ,  Yasuhisa YAMAMOTO

IPC: H01L27/02 ,  H03F3/213 ,  H01L23/00 ,  H01L29/423 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H03F1/52 ,  H03F3/195 ,  H01L29/861 ,  H01L29/06 ,  H01L29/737

Abstract: An amplifier circuit including a semiconductor element is formed on a substrate. A protection circuit is formed including a plurality of protection diodes that are formed on the substrate and that are connected in series with each other, the protection circuit being connected to an output terminal of the amplifier circuit. A pad conductive layer is formed that at least partially includes a pad for connecting to a circuit outside the substrate. An insulating protective film covers the pad conductive layer. The insulating protective film includes an opening that exposes a partial area of a surface of the pad conductive layer, and that covers another area. A first bump is formed on the pad conductive layer on a bottom surface of the opening, and a second bump at least partially overlaps the protection circuit in plan view and is connected to a ground (GND) potential connected to the amplifier circuit.

公开(公告)号：US20200066886A1

公开(公告)日：2020-02-27

申请号：US16525400

申请日：2019-07-29

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Yasunari UMEMOTO ,  Takayuki TSUTSUI ,  Satoshi TANAKA

IPC: H01L29/73 ,  H01L27/082 ,  H01L29/205 ,  H01L29/08 ,  H01L29/417 ,  H01L29/737 ,  H01L21/8252 ,  H01L21/285 ,  H01L21/306 ,  H01L21/308 ,  H01L29/66

Abstract: A first sub-collector layer functions as an inflow path of a collector current that flows in a collector layer of a heterojunction bipolar transistor. A collector ballast resistor layer having a lower doping concentration than the first sub-collector layer is disposed between the collector layer and the first sub-collector layer.

公开(公告)号：US20190214382A1

公开(公告)日：2019-07-11

申请号：US16243943

申请日：2019-01-09

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shigeki KOYA ,  Takayuki TSUTSUI ,  Kazuhito NAKAI ,  Yusuke TANAKA

IPC: H01L27/06 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L27/067 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/5228 ,  H01L23/528

Abstract: A semiconductor device includes a plurality of unit transistors that are arranged on a surface of a substrate in a first direction. Input capacitive elements are arranged so as to correspond to the unit transistors. An emitter common wiring line is connected to emitter layers of the unit transistors. A via-hole extending from the emitter common wiring line to a back surface of the substrate is disposed at a position overlapping the emitter common wiring line. A collector common wiring line is connected to collector layers of the unit transistors. The input capacitive elements, the emitter common wiring line, the unit transistors, and the collector common wiring line are arranged in this order in a second direction. Base wiring lines that connect the input capacitive elements to base layers of the corresponding unit transistors intersect the emitter common wiring line without physical contact.

公开(公告)号：US20190199302A1

公开(公告)日：2019-06-27

申请号：US16227189

申请日：2018-12-20

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takayuki TSUTSUI ,  Satoshi TANAKA ,  Yasuhisa YAMAMOTO

IPC: H03F3/21 ,  H03F3/195 ,  H03F1/56

CPC classification number: H03F3/211 ,  H03F1/565 ,  H03F3/195 ,  H03F2200/165 ,  H03F2200/222 ,  H03F2200/237 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2203/21103 ,  H03F2203/21112 ,  H03F2203/21124

Abstract: A power amplifier circuit amplifies a radio-frequency signal in a transmit frequency band. The power amplifier circuit includes an amplifier, a bias circuit, and an impedance circuit. The amplifier amplifies power of a radio-frequency signal and outputs an amplified signal. The impedance circuit is connected between a signal input terminal of the amplifier and a bias-current output terminal of the bias circuit and has frequency characteristics in which attenuation is obtained in the transmit frequency band. The impedance circuit includes first and second impedance circuits. The first impedance circuit is connected to the signal input terminal. The second impedance circuit is connected between the first impedance circuit and the bias-current output terminal.