发明申请
- 专利标题： HARD MASK, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS
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申请号： US16881787申请日： 2020-05-22
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公开(公告)号： US20200370172A1公开(公告)日： 2020-11-26
- 发明人: Tsuyoshi MORIYA , Tadahiro ISHIZAKA , Yoshinori MORISADA
- 申请人： Tokyo Electron Limited
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 优先权： JP2019-097156 20190523
- 主分类号： C23C16/27
- IPC分类号： C23C16/27 ; H01L21/311 ; C23C16/455
摘要：
In a hard mask formed on a target film formed on a substrate, a first film having a stress in a first direction and a second film having a stress in a second direction opposite to the first direction are alternately stacked one or more times.