Invention Application
- Patent Title: GeH4/Ar Plasma Chemistry For Ion Implant Productivity Enhancement
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Application No.: US17023879Application Date: 2020-09-17
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Publication No.: US20210005416A1Publication Date: 2021-01-07
- Inventor: Bon-Woong Koo , Ajdin Sarajlic , Ronald Johnson , Nunzio V. Carbone , Peter Ewing , Mervyn Deegan
- Applicant: APPLIED Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED Materials, Inc.
- Current Assignee: APPLIED Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01J37/08
- IPC: H01J37/08 ; H01J37/317
Abstract:
A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.
Public/Granted literature
- US11450504B2 GeH4/Ar plasma chemistry for ion implant productivity enhancement Public/Granted day:2022-09-20
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