公开(公告)号：US20240274404A1

公开(公告)日：2024-08-15

申请号：US18107819

申请日：2023-02-09

Applicant: Applied Materials, Inc.

Inventor： Frank Sinclair ,  Tseh-Jen Hsieh ,  Vikram M. Bhosle ,  Bon-Woong Koo ,  Gregory Edward Stratoti

IPC: H01J37/304 ,  C23C14/22 ,  C23C14/54 ,  H01J37/09 ,  H01J37/317

CPC classification number: H01J37/304 ,  C23C14/221 ,  C23C14/54 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0453 ,  H01J2237/24564 ,  H01J2237/327

Abstract: An ion implanter and a method for reducing particle formation in a process chamber are disclosed. The ion implanter includes one or more gas sources in communication with the process chamber to introduce an oxygen-containing gas. After certain criteria has been met, a gas treatment process is initiated. This criteria may be related to the number of workpieces that have been processed or based on the number of particles detected in the process chamber. During the gas treatment process, the oxygen-containing gas is introduced and interacts with depositions disposed on the walls of the process chamber to transform the brittle film into a softer more pliable film that may be less susceptible to breaking. In some embodiments, the oxygen-containing gas may be oxygen gas, ozone or oxygen radicals which are introduced to the process chambers. In some embodiments, water vapor is introduced.

公开(公告)号：US20230386786A1

公开(公告)日：2023-11-30

申请号：US18303370

申请日：2023-04-19

Applicant: Applied Materials, Inc.

Inventor： Frank Sinclair ,  Bon-Woong Koo ,  Tseh-Jen Hsieh ,  Gregory E. Stratoti

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/31703 ,  H01J2237/006 ,  H01J2237/022

Abstract: A method of reducing gallium particle formation in an ion implanter. The method may include performing a gallium implant process in the ion implanter, the gallium implant process comprising implanting a first dose of gallium ions from a gallium ion beam into a first set of substrates, while the first set of substrates are disposed in a process chamber of the beamline ion implanter. As such, a metallic gallium material may be deposited on one or more surfaces within a downstream portion of the ion implanter. The method may include performing a reactive gas bleed operation into at least one location of the downstream portion of the ion implanter, the reactive bleed operation comprising providing a reactive gas through a gas injection assembly, wherein the metallic gallium material is altered by reaction with the reactive gas.

公开(公告)号：US20230138326A1

公开(公告)日：2023-05-04

申请号：US17513241

申请日：2021-10-28

Applicant: Applied Materials, Inc.

Inventor： D. Jeffrey Lischer ,  Bon-Woong Koo ,  Dawei Sun ,  Chi-Yang Cheng ,  Paul Joseph Murphy ,  Frank Sinclair ,  Gregory Edward Stratoti ,  Tseh-Jen Hsieh ,  Wayne Chen ,  Guy Oteri

IPC: H01L21/67 ,  G05D22/02

Abstract: A load lock in which the pumping speed is controlled so as to minimize the possibility of condensation is disclosed. The load lock is in communication with a vacuum pump and a valve. A controller is used to control the valve such that the supersaturation ratio within the load lock does not exceed a predetermined threshold, which is less than or equal to the critical value at which vapor condenses. In certain embodiments, a computer model is used to generate a profile, which may be a pumping speed profile or a pressure profile, and the valve is controlled according to the profile. In another embodiment, the load lock comprises a temperature sensor and a pressure sensor. The controller may calculate the supersaturation ratio based on these parameters and control the valve accordingly.

公开(公告)号：US11450504B2

公开(公告)日：2022-09-20

申请号：US17023879

申请日：2020-09-17

Applicant: APPLIED Materials, Inc.

Inventor： Bon-Woong Koo ,  Ajdin Sarajlic ,  Ronald Johnson ,  Nunzio V. Carbone ,  Peter Ewing ,  Mervyn Deegan

IPC: H01J37/08 ,  H01J37/317

Abstract: A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.

公开(公告)号：US20230187165A1

公开(公告)日：2023-06-15

申请号：US17551849

申请日：2021-12-15

Applicant: Applied Materials, Inc.

Inventor： June Young Kim ,  Jin Young Choi ,  Yong-Seok Hwang ,  Kyoung-Jae Chung ,  Bon-Woong Koo

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/09 ,  C23C14/48 ,  C23C14/52

CPC classification number: H01J37/08 ,  C23C14/48 ,  C23C14/52 ,  H01J37/09 ,  H01J37/3171

Abstract: An IHC ion source having increased plasma potential is disclosed. In certain embodiments, the extraction plate is biased at a higher voltage than the body of the arc chamber to achieve the higher plasma potential. Shielding electrodes may be utilized to remove the interaction between the biased extraction plate and the plasma. The cross-section of the arc chamber may be circular or nearly circular to facilitate the rotation of electrons in the chamber. In another embodiment, biased electrodes may be disposed in the chamber on opposite sides of the extraction aperture in the height direction. In some embodiments, only one of the electrodes is biased at a voltage greater than the body of the arc chamber.

公开(公告)号：US20230080083A1

公开(公告)日：2023-03-16

申请号：US17473096

申请日：2021-09-13

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Alexander S. Perel ,  Jay T. Scheuer ,  Bon-Woong Koo ,  Robert C. Lindberg ,  Peter F. Kurunczi ,  Graham Wright

IPC: H01J27/02 ,  H01J37/08

Abstract: An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.

公开(公告)号：US11562885B2

公开(公告)日：2023-01-24

申请号：US17351842

申请日：2021-06-18

Applicant: Applied Materials, Inc.

Inventor： Thomas Stacy ,  Jay T. Scheuer ,  Eric D. Hermanson ,  Bon-Woong Koo ,  Tseh-Jen Hsieh

IPC: H01J37/05 ,  H01J37/301 ,  H01J37/317

Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.

公开(公告)号：US20220037114A1

公开(公告)日：2022-02-03

申请号：US17351842

申请日：2021-06-18

Applicant: Applied Materials, Inc.

Inventor： Thomas Stacy ,  Jay T. Scheuer ,  Eric D. Hermanson ,  Bon-Woong Koo ,  Tseh-Jen Hsieh

IPC: H01J37/301 ,  H01J37/317 ,  H01J37/05

Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.

公开(公告)号：US20210287872A1

公开(公告)日：2021-09-16

申请号：US16817500

申请日：2020-03-12

Applicant: Applied Materials, Inc.

Inventor： Bon-Woong Koo ,  Frank Sinclair ,  Alexandre Likhanskii ,  Svetlana Radovanov ,  Alexander Perel ,  Graham Wright ,  Jay T. Scheuer ,  Daniel Tieger ,  You Chia Li ,  Jay Johnson ,  Tseh-Jen Hsieh ,  Ronald Johnson

IPC: H01J37/08 ,  H01J37/317

Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.

公开(公告)号：US20210005416A1

公开(公告)日：2021-01-07

申请号：US17023879

申请日：2020-09-17

Applicant: APPLIED Materials, Inc.

Inventor： Bon-Woong Koo ,  Ajdin Sarajlic ,  Ronald Johnson ,  Nunzio V. Carbone ,  Peter Ewing ,  Mervyn Deegan

IPC: H01J37/08 ,  H01J37/317

Abstract: A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.