- 专利标题： GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF METALS
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申请号： US16890141申请日： 2020-06-02
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公开(公告)号： US20210020454A1公开(公告)日： 2021-01-21
- 发明人: Subhadeep Kal , Daisuke Ito , Matthew Flaugh , Yusuke Muraki , Aelan Mosden
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; C23F1/02 ; C23F1/12
摘要：
A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.
公开/授权文献
- US11715643B2 Gas phase etch with controllable etch selectivity of metals 公开/授权日：2023-08-01
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