公开(公告)号：US11715643B2

公开(公告)日：2023-08-01

申请号：US16890141

申请日：2020-06-02

Applicant: Tokyo Electron Limited

Inventor： Subhadeep Kal ,  Daisuke Ito ,  Matthew Flaugh ,  Yusuke Muraki ,  Aelan Mosden

IPC: H01L21/3213 ,  C23F1/12 ,  C23F1/02 ,  H01L21/66 ,  H01L21/306 ,  H01L21/02

CPC classification number: H01L21/32135 ,  C23F1/02 ,  C23F1/12 ,  H01L21/30621 ,  H01L21/32136 ,  H01L21/32138 ,  H01L22/12 ,  H01L21/0228

Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.

公开(公告)号：US11322350B2

公开(公告)日：2022-05-03

申请号：US16868277

申请日：2020-05-06

Applicant: Tokyo Electron Limited

Inventor： Daisuke Ito ,  Subhadeep Kal ,  Shinji Irie ,  Aelan Mosden

IPC: H01L21/3065 ,  H01L21/027 ,  H01J37/32 ,  H01L21/67 ,  G03F7/20

Abstract: Embodiments provide a non-plasma etch, such as a gas-phase and/or remote plasma etch, of titanium-containing material layers with tunable selectivity to other material layers. A substrate is received within a process chamber, and the substrate has exposed material layers including a titanium-containing material layer and at least one additional material layer. The additional material layer is selectively etched with respect to the titanium-containing material layer by exposing the substrate to a controlled environment including a halogen-containing gas. For one embodiment, the halogen-containing gas includes a fluorine-based gas. For one embodiment, the titanium-containing material layer is a titanium or a titanium nitride material layer. For one embodiment, the additional material layer includes tungsten, tungsten oxide, hafnium oxide, silicon oxide, silicon-germanium, silicon, silicon nitride, and/or aluminum oxide. A non-selective etch with respect to the titanium-containing material layer can be performed by modulating the process parameters such as temperature.

公开(公告)号：US20210057213A1

公开(公告)日：2021-02-25

申请号：US16868277

申请日：2020-05-06

Applicant: Tokyo Electron Limited

Inventor： Daisuke Ito ,  Subhadeep Kal ,  Shinji Irie ,  Aelan Mosden

IPC: H01L21/027 ,  H01L21/3065 ,  G03F7/20 ,  H01J37/32 ,  H01L21/67

Abstract: Embodiments provide a non-plasma etch, such as a gas-phase and/or remote plasma etch, of titanium-containing material layers with tunable selectivity to other material layers. A substrate is received within a process chamber, and the substrate has exposed material layers including a titanium-containing material layer and at least one additional material layer. The additional material layer is selectively etched with respect to the titanium-containing material layer by exposing the substrate to a controlled environment including a halogen-containing gas. For one embodiment, the halogen-containing gas includes a fluorine-based gas. For one embodiment, the titanium-containing material layer is a titanium or a titanium nitride material layer. For one embodiment, the additional material layer includes tungsten, tungsten oxide, hafnium oxide, silicon oxide, silicon-germanium, silicon, silicon nitride, and/or aluminum oxide. A non-selective etch with respect to the titanium-containing material layer can be performed by modulating the process parameters such as temperature.

公开(公告)号：US10923356B2

公开(公告)日：2021-02-16

申请号：US16436022

申请日：2019-06-10

Applicant: Tokyo Electron Limited

Inventor： Subhadeep Kal ,  Masashi Matsumoto ,  Daisuke Ito ,  Yusuke Muraki ,  Aelan Mosden

IPC: H01L21/3065 ,  H01L29/161 ,  H01L21/67 ,  H01L29/423

Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a silicon-germanium alloy and at least one other material, the silicon-germanium alloy represented as SixGe1-x, wherein x is a real number ranging from 0 to 1; and selectively etching the silicon-germanium alloy relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound, such as a diatomic halogen or an interhalogen compound.

公开(公告)号：US20200027741A1

公开(公告)日：2020-01-23

申请号：US16436022

申请日：2019-06-10

Applicant: Tokyo Electron Limited

Inventor： Subhadeep Kal ,  Masashi Matsumoto ,  Daisuke Ito ,  Yusuke Muraki ,  Aelan Mosden

IPC: H01L21/3065 ,  H01L29/161

Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a silicon-germanium alloy and at least one other material, the silicon-germanium alloy represented as SixGe1-x, wherein x is a real number ranging from 0 to 1; and selectively etching the silicon-germanium alloy relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound, such as a diatomic halogen or an interhalogen compound.

公开(公告)号：US20210020454A1

公开(公告)日：2021-01-21

申请号：US16890141

申请日：2020-06-02

Applicant: Tokyo Electron Limited

Inventor： Subhadeep Kal ,  Daisuke Ito ,  Matthew Flaugh ,  Yusuke Muraki ,  Aelan Mosden

IPC: H01L21/3213 ,  C23F1/02 ,  C23F1/12

Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.