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公开(公告)号：US11328932B2
公开(公告)日：2022-05-10
申请号：US17194808
申请日：2021-03-08
发明人： Yusuke Muraki
IPC分类号： H01L21/3065 , H01J37/32 , H01J37/305 , H01L21/67 , H01L21/02
摘要： A method for processing a substrate on which silicon layers and silicon germanium layers are alternately disposed, includes: forming an oxide layer on a surface layer of a spacer layer based on an oxygen-containing gas radicalized using remote plasma, wherein the spacer layer having a low dielectric constant is formed at least on side surfaces of the silicon layers and the silicon germanium layers; and removing the formed oxide layer by etching.
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2.发明授权公开(公告)号：US09443724B2
公开(公告)日：2016-09-13
申请号：US14725656
申请日：2015-05-29
IPC分类号： H01L21/311 , H01L21/02 , H01L21/768
CPC分类号： H01L21/02334 , H01L21/02057 , H01L21/02164 , H01L21/02238 , H01L21/02337 , H01L21/3065 , H01L21/76892 , H01L29/66818
摘要： A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.
摘要翻译： 修改处理方法包括制备具有通过等离子体处理形成有损伤层的硅层的基板。 该方法还包括通过用含氟气体的第一工艺气体处理衬底来去除形成在硅层上的损伤层。
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公开(公告)号：US20210020454A1
公开(公告)日：2021-01-21
申请号：US16890141
申请日：2020-06-02
发明人： Subhadeep Kal , Daisuke Ito , Matthew Flaugh , Yusuke Muraki , Aelan Mosden
IPC分类号： H01L21/3213 , C23F1/02 , C23F1/12
摘要： A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.
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公开(公告)号：US11715643B2
公开(公告)日：2023-08-01
申请号：US16890141
申请日：2020-06-02
发明人： Subhadeep Kal , Daisuke Ito , Matthew Flaugh , Yusuke Muraki , Aelan Mosden
IPC分类号： H01L21/3213 , C23F1/12 , C23F1/02 , H01L21/66 , H01L21/306 , H01L21/02
CPC分类号： H01L21/32135 , C23F1/02 , C23F1/12 , H01L21/30621 , H01L21/32136 , H01L21/32138 , H01L22/12 , H01L21/0228
摘要： A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.
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公开(公告)号：US09911596B2
公开(公告)日：2018-03-06
申请号：US15232260
申请日：2016-08-09
IPC分类号： H01L21/336 , H01L21/02 , H01L21/768 , H01L21/3065 , H01L29/66
CPC分类号： H01L21/02334 , H01L21/02057 , H01L21/02164 , H01L21/02238 , H01L21/02337 , H01L21/3065 , H01L21/76892 , H01L29/66818
摘要： A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.
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公开(公告)号：US09362149B2
公开(公告)日：2016-06-07
申请号：US14479466
申请日：2014-09-08
发明人： Yusuke Muraki , Shigeru Kasai , Tomohiro Suzuki
IPC分类号： H01L21/67 , H01L21/311 , H01L21/768
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/67115 , H01L21/67207 , H01L21/76802 , H01L21/76897
摘要： Provided is a method of etching a silicon oxide film, which includes supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and heating the reaction product to remove the reaction product. Modifying the silicon oxide film and heating the reaction product are performed using one chamber. In heating the reaction product, the reaction product is selectively heated by a heating unit.
摘要翻译： 提供一种蚀刻氧化硅膜的方法，其包括将含卤素元素的气体和碱性气体的混合气体提供到氧化硅膜的表面上; 改性氧化硅膜以产生反应产物; 并加热反应产物以除去反应产物。 使用一个室进行氧化硅膜的修饰和加热反应产物。 在加热反应产物时，通过加热单元选择性地加热反应产物。
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公开(公告)号：US10923356B2
公开(公告)日：2021-02-16
申请号：US16436022
申请日：2019-06-10
发明人： Subhadeep Kal , Masashi Matsumoto , Daisuke Ito , Yusuke Muraki , Aelan Mosden
IPC分类号： H01L21/3065 , H01L29/161 , H01L21/67 , H01L29/423
摘要： A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a silicon-germanium alloy and at least one other material, the silicon-germanium alloy represented as SixGe1-x, wherein x is a real number ranging from 0 to 1; and selectively etching the silicon-germanium alloy relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound, such as a diatomic halogen or an interhalogen compound.
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公开(公告)号：US20200027741A1
公开(公告)日：2020-01-23
申请号：US16436022
申请日：2019-06-10
发明人： Subhadeep Kal , Masashi Matsumoto , Daisuke Ito , Yusuke Muraki , Aelan Mosden
IPC分类号： H01L21/3065 , H01L29/161
摘要： A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a silicon-germanium alloy and at least one other material, the silicon-germanium alloy represented as SixGe1-x, wherein x is a real number ranging from 0 to 1; and selectively etching the silicon-germanium alloy relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound, such as a diatomic halogen or an interhalogen compound.
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