Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US15931230Application Date: 2020-05-13
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Publication No.: US20210028082A1Publication Date: 2021-01-28
- Inventor: Tatsuya USAMI , Hironobu MIYAMOTO , Masami SAWADA
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2019-134668 20190722
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/373 ; H01L29/24 ; H01L29/20 ; H01L29/16
Abstract:
A Semiconductor device includes a substrate and a thermal conductive film. The substrate has a top surface and a back surface which oppose with each other. A first opening is formed on the back surface of substrate. The thermal conductive film includes a first thermal conductive portion formed in the first opening. The first thermal conductive portion is embedded in the first opening such that a void is formed in the first opening.
Public/Granted literature
- US11302596B2 Semiconductor device Public/Granted day:2022-04-12
Information query
IPC分类:
