Invention Application
- Patent Title: Power Semiconductor Package and Method for Fabricating a Power Semiconductor Package
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Application No.: US16991123Application Date: 2020-08-12
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Publication No.: US20210057375A1Publication Date: 2021-02-25
- Inventor: Wee Aun Jason Lim , Paul Armand Asentista Calo , Ting Soon Chin , Chooi Mei Chong , Sanjay Kumar Murugan , Ying Pok Sam , Chee Voon Tan
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102019122382.2 20190820
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/56 ; H01L23/31 ; H01L23/495

Abstract:
A power semiconductor package includes a power semiconductor chip, an electrical connector arranged at a first side of the power semiconductor chip and having a first surface that is coupled to a power electrode of the power semiconductor chip, an encapsulation body at least partially encapsulating the power semiconductor chip and the electrical connector, and an electrical insulation layer arranged at a second surface of the electrical connector opposite the first surface, wherein parts of the encapsulation body and the electrical insulation layer form a coplanar surface of the power semiconductor package.
Public/Granted literature
- US11211356B2 Power semiconductor package and method for fabricating a power semiconductor package Public/Granted day:2021-12-28
Information query
IPC分类: