- 专利标题： METHOD OF ETCHING SILICON OXIDE FILM AND PLASMA PROCESSING APPARATUS
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申请号： US17010983申请日： 2020-09-03
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公开(公告)号： US20210082712A1公开(公告)日： 2021-03-18
- 发明人: Koki CHINO , Satoshi YAMADA , Yoshimitsu KON
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 优先权： JP2019-168083 20190917
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/67 ; H01J37/32
摘要：
A disclosed method etches a silicon oxide film of a substrate on which a mask is provided. The method includes performing first plasma processing on a substrate by using a first plasma formed from a first processing gas including a fluorocarbon gas, a fluorine-free carbon-containing gas, and an oxygen-containing gas. The method further includes performing second plasma processing on the substrate by using a second plasma formed from a second processing gas including a fluorocarbon gas. A temperature of the substrate during the first plasma processing is lower than the temperature of the substrate during the second plasma processing.
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