Invention Application
- Patent Title: DUAL-GATED MEMTRANSISTOR CROSSBAR ARRAY, FABRICATING METHODS AND APPLICATIONS OF SAME
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Application No.: US17036428Application Date: 2020-09-29
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Publication No.: US20210098611A1Publication Date: 2021-04-01
- Inventor: Mark C. Hersam , Vinod K. Sangwan , Hong-Sub Lee
- Applicant: NORTHWESTERN UNIVERSITY
- Applicant Address: US IL Evanston
- Assignee: NORTHWESTERN UNIVERSITY
- Current Assignee: NORTHWESTERN UNIVERSITY
- Current Assignee Address: US IL Evanston
- Main IPC: H01L29/68
- IPC: H01L29/68 ; H01L27/12 ; H01L29/24 ; H01L29/66 ; H01L29/739 ; G06N3/04 ; G06N3/08
Abstract:
A memtransistor includes a top gate electrode and a bottom gate electrode; a polycrystalline monolayer film formed of an atomically thin material disposed between the top gate electrode and the bottom gate electrode; and source and drain electrodes spatial-apart formed on the polycrystalline monolayer film to define a channel in the polycrystalline monolayer film between the source and drain electrodes. The top gate electrode and the bottom gate electrode are capacitively coupled with the channel.
Public/Granted literature
- US12183811B2 Dual-gated memtransistor crossbar array, fabricating methods and applications of same Public/Granted day:2024-12-31
Information query
IPC分类:
