公开(公告)号：US11889775B2

公开(公告)日：2024-01-30

申请号：US16770662

申请日：2018-12-17

申请人： NORTHWESTERN UNIVERSITY

发明人： Vinod K. Sangwan ,  Hong-Sub Lee ,  Mark C. Hersam

IPC分类号： H10N70/20 ,  G11C13/00 ,  H10B63/00 ,  H10N70/00 ,  G06N3/049 ,  G06N3/088 ,  G06N3/065

CPC分类号： H10N70/253 ,  G11C13/0002 ,  H10B63/30 ,  H10N70/023 ,  H10N70/24 ,  H10N70/823 ,  H10N70/841 ,  H10N70/8822 ,  H10N70/8825 ,  G06N3/049 ,  G06N3/065 ,  G06N3/088

摘要： One aspect of the invention relates to a multi-terminal memtransistor. The memtransistor includes a substrate having a first surface and an opposite, second surface, a polycrystalline monolayer film formed of an atomically thin material on the first surface of the substrate, an electrode array having a plurality of electrodes spatial-apart formed on the polycrystalline monolayer film such that each pair of electrodes defines a channel in the polycrystalline monolayer film therebetween, and a gate electrode formed on the second surface of the substrate and capacitively coupled with the channel. The polycrystalline monolayer film contains grains defining a plurality of grain boundaries thereof. The multi-terminal memtransistor operates much like a neuron by performing both memory and information processing, and can be a foundational circuit element for new forms of neuromorphic computing.

公开(公告)号：US20210098611A1

公开(公告)日：2021-04-01

申请号：US17036428

申请日：2020-09-29

申请人： NORTHWESTERN UNIVERSITY

发明人： Mark C. Hersam ,  Vinod K. Sangwan ,  Hong-Sub Lee

IPC分类号： H01L29/68 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/739 ,  G06N3/04 ,  G06N3/08

摘要： A memtransistor includes a top gate electrode and a bottom gate electrode; a polycrystalline monolayer film formed of an atomically thin material disposed between the top gate electrode and the bottom gate electrode; and source and drain electrodes spatial-apart formed on the polycrystalline monolayer film to define a channel in the polycrystalline monolayer film between the source and drain electrodes. The top gate electrode and the bottom gate electrode are capacitively coupled with the channel.

公开(公告)号：US20240122082A1

公开(公告)日：2024-04-11

申请号：US18538034

申请日：2023-12-13

申请人： NORTHWESTERN UNIVERSITY

发明人： Vinod K. Sangwan ,  Hong-Sub Lee ,  Mark C. Hersam

IPC分类号： H10N70/20 ,  G11C13/00 ,  H10B63/00 ,  H10N70/00

CPC分类号： H10N70/253 ,  G11C13/0002 ,  H10B63/30 ,  H10N70/023 ,  H10N70/24 ,  H10N70/823 ,  H10N70/841 ,  H10N70/8822 ,  H10N70/8825 ,  G06N3/049

摘要： One aspect of the invention relates to a method for fabricating a memtransistor comprising growing a polycrystalline monolayer film on a substrate, wherein the polycrystalline monolayer film contains grains defining a plurality of grain boundaries thereof; and forming an electrode array on the grown polycrystalline monolayer film, wherein the electrode array has a plurality of electrodes electrically coupled with the polycrystalline monolayer film such that each pair of electrodes defines a channel in the polycrystalline monolayer film therebetween.