- 专利标题: PARTIALLY WRITTEN BLOCK TREATMENT
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申请号: US17123472申请日: 2020-12-16
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公开(公告)号: US20210103389A1公开(公告)日: 2021-04-08
- 发明人: Sivagnanam Parthasarathy , Terry M. Grunzke , Lucia Botticchio , Walter Di Francesco , Vamshi K. Indavarapu , Gianfranco Valeri , Renato C. Padilla , Ali Mohammadzadeh , Jung Sheng Hoei , Luca De Santis
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 主分类号: G06F3/06
- IPC分类号: G06F3/06 ; G06F12/02 ; G06F12/1009
摘要:
The present disclosure relates to partially written block treatment. An example method comprises maintaining, internal to a memory device, a status of a last written page corresponding to a partially written block. Responsive to receiving, from a controller, a read request to a page of the partially written block, the example method can include determining, from page map information maintained internal to the memory device and from the status of the last written page, which of a number of different read trim sets to use to read the page of the partially written block corresponding to the read request.
公开/授权文献
- US11416154B2 Partially written block treatment 公开/授权日:2022-08-16
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