Invention Application
- Patent Title: MAGNETIC DEVICE WITH A HYBRID FREE LAYER STACK
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Application No.: US17038470Application Date: 2020-09-30
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Publication No.: US20210104344A1Publication Date: 2021-04-08
- Inventor: Van Dai Nguyen , Sebastien Couet , Olivier Bultynck , Danny Wan , Eline Raymenants
- Applicant: IMEC vzw , Katholieke Universiteit Leuven
- Applicant Address: BE Leuven; BE Leuven
- Assignee: IMEC vzw,Katholieke Universiteit Leuven
- Current Assignee: IMEC vzw,Katholieke Universiteit Leuven
- Current Assignee Address: BE Leuven; BE Leuven
- Priority: EP19201001.5 20191002
- Main IPC: H01F10/32
- IPC: H01F10/32 ; G11C11/16 ; H01L43/10 ; H01L43/02 ; H01L43/12 ; H01L43/08 ; H01L27/22 ; G01R33/09
Abstract:
In one aspect, the disclosed technology relates to a magnetic device, which may be a magnetic memory and/or logic device. The magnetic device can comprise a seed layer; a first free magnetic layer provided on the seed layer; an interlayer provided on the first free magnetic layer; a second free magnetic layer provided on the interlayer; a tunnel barrier provided on the second free magnetic layer; and a fixed magnetic layer. The first free magnetic layer and the second free magnetic layer can be ferromagnetically coupled across the interlayer through exchange interaction.
Public/Granted literature
- US11587708B2 Magnetic device with a hybrid free layer stack Public/Granted day:2023-02-21
Information query
