- 专利标题: MULTIPLE GERMANIUM ATOM QUANTUM DOT AND DEVICES INCLUSIVE THEREOF
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申请号: US17167295申请日: 2021-02-04
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公开(公告)号: US20210184115A1公开(公告)日: 2021-06-17
- 发明人: Robert A. Wolkow , Roshan Achal , Taleana Huff , Hatem Labidi , Lucian Livadaru , Paul Piva , Mohammad Rashidi
- 申请人: Quantum Silicon Inc.
- 申请人地址: CA Edmonton
- 专利权人: Quantum Silicon Inc.
- 当前专利权人: Quantum Silicon Inc.
- 当前专利权人地址: CA Edmonton
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L27/24 ; H01L29/66 ; H01L29/34 ; H01L29/12 ; H01L29/76 ; H01L49/00
摘要:
A multiple-atom germanium quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated germanium surface, each dangling bonds having one of three ionization states of +1, 0 or −1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the germanium band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.