A semiconductor memory device includes a first memory cell, a second memory cell, and a first wiring and a second wiring electrically connected to the first memory cell and the second memory cell. In a write operation, a program operation starts at a first timing and a supply of a write pass voltage starts at a second timing. When a first command is received in a first period between the first timing and the second timing, the write operation is interrupted before the supply of the write pass voltage starts.