- 专利标题: MEMORY ARRAY CIRCUIT AND METHOD OF MANUFACTURING SAME
-
申请号: US17213074申请日: 2021-03-25
-
公开(公告)号: US20210217742A1公开(公告)日: 2021-07-15
- 发明人: Hidehiro FUJIWARA , Sahil Preet SINGH , Chih-Yu LIN , Hsien-Yu PAN , Yen-Huei CHEN , Hung-Jen LIAO
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; H01L27/11 ; H01L23/522 ; G11C5/06 ; G11C7/18
摘要:
A memory array includes a first memory cell configured to store data, a second memory cell configured to store data and a bit line extending along the first direction, and being over the first memory cell and the second memory cell. The first memory cell and the second memory cell are arranged along a first direction in a first column of memory cells. The bit line includes a first conductor extending in the first direction and being in a first conductive layer, and a second conductor extending in the first direction and being in a second conductive layer different from the first conductive layer.
公开/授权文献
- US12074156B2 Memory array circuit and method of manufacturing same 公开/授权日:2024-08-27
信息查询
IPC分类: