- 专利标题: SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
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申请号: US17235603申请日: 2021-04-20
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公开(公告)号: US20210242242A1公开(公告)日: 2021-08-05
- 发明人: Toshio HINO , Junji IWAHORI
- 申请人: SOCIONEXT INC.
- 申请人地址: JP Kanagawa
- 专利权人: SOCIONEXT INC.
- 当前专利权人: SOCIONEXT INC.
- 当前专利权人地址: JP Kanagawa
- 优先权: JP2016-131372 20160701
- 主分类号: H01L27/118
- IPC分类号: H01L27/118 ; H01L29/423 ; H01L29/10 ; H01L21/8238 ; H01L29/775 ; H01L29/08 ; B82Y10/00 ; H01L29/06 ; H01L27/092 ; H01L29/786 ; H01L27/02
摘要:
A semiconductor integrated circuit device including standard cells including fin transistors includes, at a cell row end, a cell-row-terminating cell that does not contribute to a logical function of a circuit block. The cell-row-terminating cell includes a plurality of fins extending in an X direction. Ends of the plurality of fins on the inner side of the circuit block are near a gate structure placed at a cell end and do not overlap with the gate structure in a plan view, and ends of the plurality of fins on an outer side of the circuit block overlap with any one of a gate structure in a plan view.
公开/授权文献
- US11574930B2 Semiconductor integrated circuit device 公开/授权日:2023-02-07
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