- 专利标题： TECHNIQUES FOR FABRICATING CHARGE BALANCED (CB) TRENCH-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) DEVICES
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申请号： US17338337申请日： 2021-06-03
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公开(公告)号： US20210288180A1公开(公告)日： 2021-09-16
- 发明人: Stephen Daley Arthur , Alexander Viktorovich Bolotnikov , Reza Ghandi , David Alan Lilienfeld , Peter Almern Losee
- 申请人： General Electric Company
- 申请人地址： US NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Schenectady
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/10 ; H01L29/66 ; H01L29/16 ; H01L21/04 ; H01L29/08
摘要：
A charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) device may include a charge balanced (CB) layer defined within a first epitaxial (epi) layer that has a first conductivity type. The CB layer may include charge balanced (CB) regions that has a second conductivity type. The CB trench-MOSFET device may include a device layer defined in a second epi layer and having the first conductivity type, where the device layer is disposed on the CB layer. The device layer may include a source region, a base region, a trench feature, and a shield region having the second conductivity type disposed at a bottom surface of the trench feature. The device layer may also include a charge balanced (CB) bus region having the second conductivity type that extends between and electrically couples the CB regions of the CB layer to at least one region of the device layer having the second conductivity type.
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